Gallium Nitride is one kind of wide-gap compound semiconductors.
EINECS Number 247-129-0 Mitsubishi Chemical's Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications. In order to achieve higher quality and productivity, we have been developing the Liquid Phase growth process ; SCAAT(TM).