GaN Wafer

Gallium Nitride is one kind of wide-gap compound semiconductors.
CAS No.25617-97-4
EINECS Number 247-129-0
Mitsubishi Chemical's Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications. In order to achieve higher quality and productivity, we have been developing the Liquid Phase growth process ; SCAAT(TM).

Inquiries

Characteristics

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Gallium Nitride, GaN
CAS No.25617-97-4,
EINECS Number 247-129-0

 

1. Mitsubishi Chemical provides high-quality GaN substrates which are produced by originally designed HVPE (Hydride Vapor Phase Epitaxy) method , utilizing more than 30 years experience in the GaAsP epiwafer business.


2. More than 30 years of wafer fabrication technology experience with GaAs substrates has been applied to the GaN substrate production. GaN substrate has a damage-free, very flat(Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epitaxial growth has been achieved.

Wafer fabrication technology: More than 30 years of GaAs substrate processing experience. (slicing, beveling, lapping, polishing, cleaning, etc.)


3.In order to achieve higher quality and productivity, we have been developing the Liquid Phase growth process ; SCAAT(TM)

Applications

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- Various LED's

- Laser diodes: blue LD,

-Power electronic devices, High frequency electronic devices

Usage

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Substrates for epitaxial growth by MOCVD etc.

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