We offer ultra‑high‑purity process materials and consumables for wafer manufacturing, rigorously controlled for low metal and particle levels.
For silicon ingot and wafer production, we provide optimized materials and technologies tailored to each process—please contact us for details.

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Semiconductor Process Solution

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Synthetic Silica Powder Mitsubishi Synthetic Silica

Characteristics：
Due to its outstanding quality and purity, synthetic silica is used as a raw material for high-purity quartz crucibles and silicon wafers manufacturing.
Form：
Powder particle size D50【μm】（60～200）

Mitsubishi Synthetic Silica Product Page

Wafer

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Advanced Cleaning Solutions MC1

Characteristics：
MC1 is an electronics chemical that is used as a high-performance alternative RCA clean for silicon wafers and the like.
Form：
Liquid

Ultra High Purity Process Chemicals EL Hydrochloric Acid

Characteristics：
Our EL hydrochloric Acid can realize metal impurities below 10ppt.
Form：
Liquid

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Gallium Nitride (GaN) Substrate

Characteristics：
Our Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate produced using epitaxial technology known as HVPE and compound semiconductor processing techniques. It is characterized by uniform, high-quality crystallinity and surface quality.
Form：
Wafer

Gallium Nitride (GaN) Substrate Product Page

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Mitsubishi Chemical Corporation
Comprehensive Semiconductor Solutions

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